PMZB350UPE Datasheet, NXP Semiconductors

* Low threshold voltage
* Very fast switching
* Trench MOSFET technology
* 1.8 kV ESD protected 1.3 Applications
* Relay driver
* High-speed line .

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference .

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits
* Low threshold voltage
* Very fas.